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U.S. Department of Energy
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Polarized RF guns

Conference ·
DOI:https://doi.org/10.1063/1.58843· OSTI ID:674764
RF guns employing photocathodes are now well established as viable electron sources for accelerator applications. For high energy accelerators the desirable properties of such sources include the relative ease of pulse formation (using the source laser system to establish the pulse shape and number) and a low transverse beam emittance, eliminating the need for rf chopping and bunching systems and reducing the demands on emittance-reducing damping rings. However, most high-energy accelerators now require polarized electrons. Polarized electron beam scan in principle be generated by substituting a 3--5 semiconductor, such as GaAs, for the traditional photocathode in a conventional rf gun structure. In the past, the principal criterion for selection of photocathodes for rf guns has been the ability to maintain a reasonable quantum yield from the cathode over a relatively long operating period. It is well known that GaAs is significantly more sensitive to the vacuum environment than any of the cathode types that have been used to date. However, advances in the understanding of how to operate GaAs cathodes in hostile environments combined with similar advances in the ability to prepare gun structures that will significantly reduce dark current and rf breakdown lend credibility to the prospect of successfully operating an rf gun with the activated GaAs cathode. The status of research related to polarized rf guns is reviewed and the outline of a future polarized rf source combining the best of what is known. Today.
Research Organization:
Stanford Univ., Stanford Linear Accelerator Center, CA (US)
Sponsoring Organization:
USDOE Office of Energy Research, Washington, DC (US)
DOE Contract Number:
AC03-76SF00515
OSTI ID:
674764
Report Number(s):
SLAC-PUB--7854; CONF-980742--; ON: DE98059238
Country of Publication:
United States
Language:
English

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