X-ray photoemission electron microscopy for the study of semiconductor materials
- Lawrence Berkeley National Lab., CA (United States). Advanced Light Source Div.
- Lawrence Livermore National Lab., CA (United States)
- IBM Almaden Research Center, San Jose, CA (United States)
- Univ. de Oviedo (Spain). Dept. de Fisica
- EMPA, Duebendorf (Germany)
Photoemission Electron Microscopy (PEEM) using X-rays is a novel combination of two established materials analysis techniques--PEEM using UV light, and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy. This combination allows the study of elemental composition and bonding structure of the sample by NEXAFS spectroscopy with a high spatial resolution given by the microscope. A simple, two lens, 10 kV operation voltage PEEM has been used at the Stanford Synchrotron Radiation Laboratory and at the Advanced Light Source (ALS) in Berkeley to study various problems including materials of interest for the semiconductor industry. In the present paper the authors give a short overview over the method and the instrument which was used, and describe in detail a number of applications. These applications include the study of the different phases of titanium disilicide, various phases of boron nitride, and the analysis of small particles. A brief outlook is given on possible new fields of application of the PEEM technique, and the development of new PEEM instruments.
- Research Organization:
- Lawrence Berkeley National Lab., Advanced Light Source Div., Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 674708
- Report Number(s):
- LBNL--41062; CONF-980364--; ON: DE98056095
- Country of Publication:
- United States
- Language:
- English
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