Determination of the bonding and growth of Ag on Si(100)-(2 x 1)

Journal Article · Tue Nov 15 04:00:00 EST 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.9889· OSTI ID:6743543

Samsavar, A; Miller, T; Chiang, T

The bonding and growth of Ag on Si(100) were studied with high-resolution photoemission spectroscopy and high-energy electron diffraction. By monitoring the changes in the Si 2p core-level and Ag 4d valence-band line shapes, we have examined the chemical interaction between the Ag adatoms and Si surface dimer atoms. The Ag-to-Si bonding coordination number as a function of coverage was obtained. This number is 2 at low Ag coverages, which suggests that the bonding site for a Ag adatom is between two neighboring Si surface dimers along the direction of dimerization; the two dimer dangling bonds pointing at the Ag adatom join the two Ag sp hybrid orbitals to form two Ag-Si bonds. The growth mode was observed to be three dimensional at higher coverages. The Schottky-barrier height was measured.

• Research Organization: Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
• OSTI ID: 6743543
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:14; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
BONDING
BREMSSTRAHLUNG
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
FABRICATION
GROWTH
JOINING
LAYERS
METALS
PHOTOELECTRON SPECTROSCOPY
RADIATIONS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SILVER
SPECTROSCOPY
SURFACES
SYNCHROTRON RADIATION
TRANSITION ELEMENTS
ULTRAHIGH VACUUM