skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Slicing of silicon into sheet material. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Eighth quarterly report, December 18, 1977--March 19, 1978

Technical Report ·
OSTI ID:6743008

Varian's technique of Multiblade Slurry Wafering of Silicon is shown to be a cost effective means of achieving IPEG cost goals for silicon sheet material. Using conservative estimates for Czochralski grown silicon ingot and the MS wafering technique, sheet prices 10 to 20% below IPEG goals for 1978 to 1982 are described. Recent tests of process variations in MS wafering have proven very unsuccessful. With one exception, variations in abrasive, oil, cutting force, etc. have resulted in reduced wafer yield and accuracy for low kerf loss (200 microns) and thin wafer (250 to 350 microns) slicing of 10 cm diameter silicon. A shift in emphasis is planned in the future. Machine shock loads will be reduced and the effect on yield improvement will be demonstrated. Prior to this series of tests, baseline slicing results will be re-established. Encouraging results have been shown in two areas. Twelve cm silicon ingot was sliced with only 200 to 250 microns of kerf loss and 300 to 350 microns wafer thickness. Improvements in this process are still required. Also, preliminary cutting with a low cost water-based slurry vehicle have shown promise. However, stress corrosion failure of the highly tensioned blades must be eliminated.

Research Organization:
Varian Associates, Lexington, MA (USA). Lexington Vacuum Div.
DOE Contract Number:
NAS-7-100-954374
OSTI ID:
6743008
Report Number(s):
DOE/JPL/954374-5
Country of Publication:
United States
Language:
English