Bi[sub 2+[ital x]]Sr[sub 2[minus][ital x]]CuO[sub [ital y]] (0. 10[le][ital x][le]0. 40) studied by photoemission and inverse-photoemission spectroscopy

Journal Article · Sun May 01 00:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.49.13119· OSTI ID:6735614

Sanada, N; Shimomura, M; Suzuki, Y; Fukuda, Y ^[1]; Nagoshi, M ^[2]; Ogita, M ^[3]; Syono, Y; Tachiki, M ^[4]

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1. Research Institute of Electronics, Shizuoka University, Hamamatsu 432 (Japan)
2. Applied Technology Research Center, NKK Corporation, Kawasaki 210 (Japan)
3. College of Engineering, Shizuoka University, Hamamatsu 432 (Japan)
4. Institute for Materials Research, Tohoku University, Sendai 980 (Japan)

Bi[sub 2+[ital x]]Sr[sub 2[minus][ital x]]CuO[sub [ital y]] (0.10[le][ital x][le]0.40) polycrystalline samples have been studied by x-ray diffraction, resistivity and Hall-coefficient measurements, x-ray and ultraviolet photoemission spectroscopy, and inverse-photoemission spectroscopy (IPES). The lattice constant of the [ital c] axis decreases and that of the [ital a]([ital b]) axis increases as a function of [ital x]. The results of Hall-coefficient measurements indicate that hole concentration is reduced as a function of [ital x], which is consistent with the results of oxygen-concentration measurements. We find no energy shifts of the core levels, valence bands, and conduction bands for the samples, which is completely different from the results for the Bi[sub 2]Sr[sub 2]Ca[sub 1[minus][ital x]]Y[sub [ital x]]Cu[sub 2]O[sub [ital y]] system. The results of IPES and resistivity measurements show that the metal-semiconductor transition occurs at about [ital x]=0.35. The states created by hole doping move to the Fermi level. The change in the electronic states is discussed.

• OSTI ID: 6735614
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 49:18; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
ELECTRONIC STRUCTURE
STOICHIOMETRY
CUPRATES
HIGH-TC SUPERCONDUCTORS
STRONTIUM OXIDES
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
FERMI LEVEL
HALL EFFECT
HOLES
LATTICE PARAMETERS
PHOTOEMISSION
POLYCRYSTALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TRANSITION TEMPERATURE
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
CRYSTALS
ELECTRICAL PROPERTIES
EMISSION
ENERGY LEVELS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SECONDARY EMISSION
STRONTIUM COMPOUNDS
SUPERCONDUCTORS
TEMPERATURE RANGE
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
360207* - Ceramics
Cermets
& Refractories- Superconducting Properties- (1992-)