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Surface charge and specific ion adsorption effects in photoelectrochemical devices

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.327616· OSTI ID:6734950
The importance of specific ion adsorption and surface charge effects in the design and operation of photoelectrochemical (PEC) devices is demonstrated by experimental data on the n-GaAs/electrolyte and n-Si/electrolyte interface. The electrolyte chosen for the present study was an ambient temperature molten salt comprising mixtures of aluminum chloride and n-butyl pyridinium chloride in varying molar ratios. A direct correlation between specific adsorption effects and photovoltaic output parameters is presented for the n-GaAs PEC system. Evidence for specific adsorption of Cl/sup -/ ions in this system is found in the systematic shift observed in flat-band potentials V/sub fb/ towards negative values with increasing concentration of free Cl/sup -/ ions in the AlCl/sub 3/-BPC electrolyte. The magnitude of the slope of V/sub fb/ versus pCl (=-log(Cl/sup -/)) plots (approx.0.13 V or 2(2.3kT/q) V) is consistent with that expected from Esin-Markov adsorption behavior. Anomalous PEC behavior is observed at the n-Si/AlCl/sub 3/-BPC interface brought about by modifications in electrostatics across the electrode/electrolyte interphasial region. These modifications arise from either specific adsorption effects or by electrodeposition of aluminum on the n-Si electrode surface. Either process results in a net lowering of the band structure in n-Si on the energy scale relative to the redox levels. An examination of literature data on high-efficiency PEC systems reveals that similar shifts in the relative positions of the semiconductor energy levels and redox energies may play an important role in ensuring a more favorable photoresponse than that predicted from idealized models.
Research Organization:
Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
OSTI ID:
6734950
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:12; ISSN JAPIA
Country of Publication:
United States
Language:
English