Defect model for ion-induced crystallization and amorphization
Extensive experimental investigations have been reported on the ion-induced motion of the interface between the crystalline and amorphous phases of silicon. The crystal grows into the amorphous phase at low ion fluxes and high temperatures. The amorphous phase grows into the crystal at high ion fluxes and low temperatures. The experimental observations are shown to fit a model based on a single defect. The concentration of this defect decays by binary recombination, this is, two of the defects annihilate one another. The model accounts for the linear relationship between interface motion and reciprocal temperature, for the Arrhenius temperature dependence of the flux at which no interface motion occurs, and for the temperature independence of the crossover frequency observed in beam pulsing experiments. The defect on which this model is based has a motion energy of 1.2 eV. Assuming that the same defect is also responsible for thermal recrystallization of the amorphous phase gives a formation energy of 1.5 eV for the defect. The defect is believed to be a dangling bond in the amorphous phase.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6732532
- Journal Information:
- J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 3:6; ISSN JMREE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ARRHENIUS EQUATION
BEAMS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALLIZATION
ELEMENTS
EQUATIONS
ION BEAMS
ION COLLISIONS
MATERIALS
MATHEMATICAL MODELS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON