Bonding of H-C[sub As] pairs in Al[sub [ital x]]Ga[sub 1[minus][ital x]]As alloys
- Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science Technology and Medicine, London SW7 2BZ (United Kingdom)
- Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Tullastrasse 72, D-79108 Freiburg (Germany)
- Department of Physics, University of Exeter, Exeter EX44 QL (United Kingdom)
- Department of Mathematics, University of Lulea, Lulea S95187 (Sweden)
The local structure of C[sub As] acceptors in Al[sub [ital x]]Ga[sub 1[minus][ital x]]As has been investigated by studying the nondegenerate localized vibrational modes of H-C[sub As] pairs with [ital A][sub 1] symmetry, rather than those of isolated [ital C][sub As] impurities. Infrared absorption and Raman scattering measurements have been made on Al[sub [ital x]]Ga[sub 1[minus][ital x]]As: [sup 12]C epilayers that (a) had been exposed to a radio-frequency hydrogen (deuterium) plasma or (b) contained hydrogen incorporated during growth. Arguments are advanced that indicate that the H(D) atom should occupy a bond-centered site between C[sub As] and Ga atoms rather than between C[sub As] and Al atoms at low temperatures. An [ital ab] [ital initio] local-density-functional calculation indicates that the energy is then lowered by 0.24 eV. This analysis has led to the assignment of five antisymmetric stretch modes and five symmetric ([ital X]) modes to H-C[sub As] pairs at sites where the carbon atom that was originally unpaired had zero, one, two, three, or four Al nearest neighbors.
- OSTI ID:
- 6731190
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:15; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
Similar Records
Bowing parameters for zinc-blende Al{sub 1{minus}{ital x}}Ga{sub {ital x}}N and Ga{sub 1{minus}{ital x}}In{sub {ital x}}N
Au-mediated low-temperature solid phase epitaxial growth of a Si{sub {ital x}}Ge{sub 1{minus}{ital x}} alloy on Si(001)
Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ABSORPTION SPECTRA
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBON ADDITIONS
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEUTERIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN ADDITIONS
HYDROGEN ISOTOPES
IMPURITIES
INFRARED SPECTRA
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-ODD NUCLEI
PNICTIDES
RAMAN EFFECT
SPECTRA
STABLE ISOTOPES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0065-0273 K