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Bonding of H-C[sub As] pairs in Al[sub [ital x]]Ga[sub 1[minus][ital x]]As alloys

Journal Article · · Physical Review, B: Condensed Matter; (United States)
;  [1]; ;  [2];  [3];  [4]
  1. Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science Technology and Medicine, London SW7 2BZ (United Kingdom)
  2. Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Tullastrasse 72, D-79108 Freiburg (Germany)
  3. Department of Physics, University of Exeter, Exeter EX44 QL (United Kingdom)
  4. Department of Mathematics, University of Lulea, Lulea S95187 (Sweden)

The local structure of C[sub As] acceptors in Al[sub [ital x]]Ga[sub 1[minus][ital x]]As has been investigated by studying the nondegenerate localized vibrational modes of H-C[sub As] pairs with [ital A][sub 1] symmetry, rather than those of isolated [ital C][sub As] impurities. Infrared absorption and Raman scattering measurements have been made on Al[sub [ital x]]Ga[sub 1[minus][ital x]]As: [sup 12]C epilayers that (a) had been exposed to a radio-frequency hydrogen (deuterium) plasma or (b) contained hydrogen incorporated during growth. Arguments are advanced that indicate that the H(D) atom should occupy a bond-centered site between C[sub As] and Ga atoms rather than between C[sub As] and Al atoms at low temperatures. An [ital ab] [ital initio] local-density-functional calculation indicates that the energy is then lowered by 0.24 eV. This analysis has led to the assignment of five antisymmetric stretch modes and five symmetric ([ital X]) modes to H-C[sub As] pairs at sites where the carbon atom that was originally unpaired had zero, one, two, three, or four Al nearest neighbors.

OSTI ID:
6731190
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:15; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English