Modeling of hydrogen implantation into graphite

Journal Article · Tue Nov 15 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341234· OSTI ID:6724535

Moeller, W; Scherzer, B M.U.

A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from t-smcapsr-smcapsIm-smcaps simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.

• Research Organization: Max Planck Institute fuer Plasmaphysik, EURATOM Association, D-8046 Garching/Muenchen, Federal Republic of Germany
• OSTI ID: 6724535
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CARBON
COLLISIONS
DEUTERIUM
DIFFUSION
ELEMENTAL MINERALS
ELEMENTS
GRAPHITE
HYDROGEN
HYDROGEN ISOTOPES
ION COLLISIONS
ION IMPLANTATION
ISOTOPES
LIGHT NUCLEI
MATHEMATICAL MODELS
MINERALS
NONMETALS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
STABLE ISOTOPES
TRAPPING