Back-contacted emitter GaAs solar cells

Journal Article · Mon Jun 25 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102859· OSTI ID:6723297

Araujo, G L; Marti, A; Algora, C ^[1]

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1. Instituto de Energia Solar- ETSI Telecomunicacon, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

A new device structure to improve the performance of concentrator GaAs solar cells is described and the first experimental results are reported. The reason for such an improvement relies on a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. The experimental results obtained with devices of these types, with a simplified structure, fabricated by liquid phase epitaxy, demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells.

• OSTI ID: 6723297
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:26; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONCENTRATOR SOLAR CELLS
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
LIQUID PHASE EPITAXY
OPERATION
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
QUANTUM EFFICIENCY
SOLAR CELLS
SOLAR EQUIPMENT