Model of the field-effect quantum-well laser with free-carrier screening and valence band mixing

Journal Article · Wed Nov 30 23:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342118· OSTI ID:6721522

Ahn, D; Chuang, S L

The effects of free-carrier screening and valence band mixing on gain-switching characteristics of the field-effect quantum-well laser are studied theoretically. Our analysis is based on the multiband effective mass theory and the density matrix formalism with the intraband relaxation taken into account. We calculate the electronic structure of the quantum well by solving simultaneously the multiband effective mass equations for the envelope functions with Poisson's equation. It is found that the free-carrier screening affects considerably both electronic properties (band structure and wave functions) and gain-switching characteristics by reducing the electric field and charge separation in the quantum well when the gate field is applied across the quantum well.

• Research Organization: Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61810
• OSTI ID: 6721522
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CARRIER DENSITY
DATA
ELECTRONIC STRUCTURE
GAIN
INFORMATION
LASERS
MATERIALS
MATHEMATICAL MODELS
NUMERICAL DATA
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
THEORETICAL DATA