Method for determining emitter recombination in Si solar cells using open-circuit voltage decay
A method for determining the emitter recombination current and thereby partitioning the total carrier recombination current into the different sections of a silicon solar cell is demonstrated. The method is destructive, requiring that a set of measurements is made on a cell before and after mechanically roughening the back of the cell. The data include short-circuit current (J/sub sc/), open-circuit voltage (V/sub oc/), and asymptotic decay rates for J/sub sc/ and V/sub oc/. High open-circuit voltage (650 mV) silicon cells are studied using the technique. It is shown that the emitter recombination current is large (1.5 x 10/sup -13/ A/cm/sup 2/), which is consistent with a band-gap narrowing mechanism. Furthermore, the high voltages are shown to result from unusually long base lifetimes (>300 ..mu..s) in 0.3-..cap omega.. cm silicon.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6721047
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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