Ion energy analysis for sputtering-type electron-cyclotron-resonance microwave plasma
This paper discusses discharge characteristics and ion energy analysis for sputtering-type electron-cyclotron-resonance microwave plasma. Sputtering discharge characteristics directly depend on the microparameters of the microwave plasma. Ionization efficiency of sputtered particles depends on the distance between resonance area and substrate, and ranges from 5% to 10%. The energy profile of ions extracted from the plasma broadens as the sputtering power increases. The application of a mirror field outside the resonance area suppresses the broadening in the energy profile of sputtered ions, and also suppresses the mean energy of the sputtered ion. Finally, the details of ion transport from the plasma to the substrate surface are discussed.
- Research Organization:
- NTT Opto-electronics Laboratories, Tokai, Ibaraki 319-11, Japan
- OSTI ID:
- 6719523
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 64:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
IONIZATION
SPUTTERING
ELECTRIC DISCHARGES
EFFICIENCY
PLASMA PRODUCTION
IRON
ZINC
ECR HEATING
ENERGY SPECTRA
MICROWAVE RADIATION
ELECTROMAGNETIC RADIATION
ELEMENTS
HEATING
HIGH-FREQUENCY HEATING
METALS
PLASMA HEATING
RADIATIONS
SPECTRA
TRANSITION ELEMENTS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)