The structure and electrical properties of metal contacts on GaAs

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6717323

Liliental-Weber, Z

This paper reports a study of the structural and analytical properties of Au and Al contacts on GaAs and their change in the range of temperatures where the Schottky barrier height changed. The annealing of Au contacts above 290/sup 0/C caused the Schottky barrier height to decrease, an effect opposite to that of Al, where the Schottky barrier height increased upon annealing. An increase in As in the GaAs under the as-deposited metal was consistently found in both cases, whereas annealing seems to change the As/Ga ratio in an opposite way for Au and Al. The orientation relationship of the Au contacts changed upon annealing, which was not observed with the annealed Al. The orientation relationship depended strongly on the surface preparation before the metal deposition and on the annealing environment. It was proposed that the presence of As at the interface can determine the orientation relationship between metals and GaAs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6717323
• Report Number(s): LBL-23016; CONF-870167-1; ON: DE87008217
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
HEAT TREATMENTS
INTERFACES
METALS
MICROSCOPY
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE TREATMENTS
TRANSITION ELEMENTS