An anomalous diffusion barrier case: The Hg sub 1 minus x Cd sub x Te/Yb/Ag junction
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (USA)
Synchrotron radiation photoemission measurements of Hg{sub 1{minus}{ital x}}Cd{sub {ital x}}Te/Ag junctions both with and without thin Yb interlayers show that the Yb layer acts to reduce Ag indiffusion at all interlayer thicknesses investigated, although three different types of behavior are observed depending on the layer thickness and morphology. We characterized the Yb layer morphology by means of the photoemission of adsorbed xenon technique. Thin (3--6 A) Yb interlayers are only partially effective, with substantial Ag indiffusion still evident. We associate this behavior with a two-dimensional island morphology of the interlayer. Thick (10--15 A) Yb interlayers are highly effective in reducing Ag indiffusion, due to the presence of a continuous reacted Yb layer and of a Yb-rich metallic phase with high alloying enthalpy for Ag. Intermediate thickness (8 A) Yb interlayers, effectively reduce Ag indiffusion at low Ag coverages ({lt}20 A), only to fail catastrophically upon further Ag deposition.
- OSTI ID:
- 6716551
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:4; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
SEMICONDUCTOR JUNCTIONS
DIFFUSION BARRIERS
SILVER
CADMIUM TELLURIDES
DEPOSITION
HETEROJUNCTIONS
MERCURY TELLURIDES
MORPHOLOGY
PHOTOEMISSION
SYNCHROTRON RADIATION
YTTERBIUM
BREMSSTRAHLUNG
CADMIUM COMPOUNDS
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
JUNCTIONS
MERCURY COMPOUNDS
METALS
RADIATIONS
RARE EARTHS
SECONDARY EMISSION
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS
360104* - Metals & Alloys- Physical Properties
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)