Thin-film deposition and junction properties of ZnCdTe

Thesis/Dissertation · Thu Jan 01 00:00:00 EST 1987

OSTI ID:6713916

Peters, M G

ZnCdTe films with ZnTe concentrations as high as 40% were deposited onto graphite substrates using the close-spaced vapor transport method. Sources used include slices from polycrystalline ZnCdTe boules and mixtures of CdTe and ZnTe powders. The high ZnTe concentrations in the films were obtained by varying the deposition parameters including the ambient pressure and the temperature difference between the source and substrate. For depositions at atmospheric pressure, small temperature differences were used to bring the film into near equilibrium with the source. Depositions under low pressures (300 micrometers) are sublimation-limited and high ZnTe concentrations resulted even for large temperature differences. The hole density of the ZnCdTe films was 5 x 10/sup 15/ cm/sup 3/ for depositions with substrate temperatures of 610/sup 0/C. No increase in film acceptor density occurred with increasing zinc concentration. Heterojunctions were prepared by evaporation of CdS onto single-crystal ZnCdTe substrates. The junctions were evaluated as a function of composition and the substrate surface preparation. The current-voltage characteristics of CdS/Zn (30%) Cd (70%) Te junctions were investigated.

• Research Organization: Stanford Univ., CA (USA)
• OSTI ID: 6713916
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SULFIDES
THIN FILMS
CADMIUM TELLURIDES
HETEROJUNCTIONS
FABRICATION
DEPOSITION
ZINC TELLURIDES
HOLES
CADMIUM COMPOUNDS
CHALCOGENIDES
FILMS
INORGANIC PHOSPHORS
JUNCTIONS
PHOSPHORS
SEMICONDUCTOR JUNCTIONS
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
360601* - Other Materials- Preparation & Manufacture