Electrical properties of tungsten trioxide films

Journal Article · Sun Jul 01 00:00:00 EDT 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576517· OSTI ID:6713462

Xu, Z; Vetelino, J F; Lec, R; Parker, D C ^[1]

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1. Laboratory for Surface Science and Technology, University of Maine, Orono, ME (USA) Department of Electrical Engineering, University of Maine, Orono, ME (USA)

Selectively doped semiconducting metal oxide (SMO) films have been shown to have applications as the sensing element in gas microsensors. Critical to the design and operation of these sensors is the SMO film. In the present work, the electrical properties of both intrinsic and extrinsic (doped with gold) tungsten trioxide (WO{sub 3}) films, which selectively sorb hydrogen sulfide (H{sub 2}S), are investigated. Hall effect measurements are performed as a function of film thickness, temperature, gold-doping concentration, and H{sub 2}S gas concentration. The conductivity was found to be {ital n} type and strongly dependent on temperature, gold doping concentration, and H{sub 2}S gas concentration and less dependent on film thickness. The mobility was relatively high while the intrinsic carrier concentration was low when compared to typical semiconductor materials. The conductivity was shown to exhibit anomalous behavior at certain temperatures and H{sub 2}S gas concentrations.

• OSTI ID: 6713462
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:4; ISSN JVTAD; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISORPTION
DIMENSIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HYDROGEN COMPOUNDS
HYDROGEN SULFIDES
MATERIALS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEPARATION PROCESSES
SORPTION
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE EFFECTS
THICKNESS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES