Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998
- Department of Physics, Syracuse University
This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 6707
- Report Number(s):
- NREL/SR-520-25922; ON: DE00006707
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electroabsorption and transport measurements and modeling in amorphous-silicon-based solar cells: Phase I technical progress report, 24 March 1998--23 March 1999
Research on high-bandgap materials and amorphous silicon-based solar cells. Annual technical report, 15 May 1995--15 May 1996
Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995
Technical Report
·
Thu Dec 16 23:00:00 EST 1999
·
OSTI ID:754642
Research on high-bandgap materials and amorphous silicon-based solar cells. Annual technical report, 15 May 1995--15 May 1996
Technical Report
·
Tue Dec 31 23:00:00 EST 1996
·
OSTI ID:434452
Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995
Technical Report
·
Thu Nov 30 23:00:00 EST 1995
·
OSTI ID:176787