Excitonic effects in gain and index in GaAlAs quantum well lasers

Journal Article · Mon Jul 09 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103962· OSTI ID:6705336

Kesler, M P; Harder, C ^[1]

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1. IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon (Switzerland)

Spontaneous emission and gain measurements in GaAlAs single quantum well lasers are presented. The gain is derived from the spontaneous emission detected through an opening in the top metallic contact of the lasers. Excitonic effects are seen in the gain (absorption) spectra for low carrier densities, and the step-like nature of the two-dimensional density of states is evident. From the gain spectra, refractive index changes are derived via a Kramers--Kronig transformation, and this is used to evaluate the linewidth enhancement factor as a function of photon energy.

• OSTI ID: 6705336
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CORRELATIONS
EXCITONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LINE WIDTHS
NONLINEAR OPTICS
OPTICAL PROPERTIES
OPTICS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS