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High-accuracy interferometry of extreme ultraviolet lithographic optical systems

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.590498· OSTI ID:670205
;  [1];  [2];  [1];  [3]; ;  [4]
  1. Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. Center for X-Ray Optics, Lawrence Berkeley National Laboratory and EECS Department, University of California, Berkeley, California 94720 (United States)
  3. Sandia National Laboratories, Livermore, California (United States)
  4. Center for X-Ray Optics, Lawrence Berkeley National Laboratory

Recent improvements in extreme ultraviolet (EUV) lithographic imaging with Schwarzschild objectives have come as a direct result of at-wavelength interferometric characterization with the phase-shifting point diffraction interferometer. High accuracy system wave front characterization has led to the determination of the best Schwarzschild objective and subaperture configuration. These investigations and the results of imaging experiments are discussed. Two pinhole null tests have provided an {ital in situ} method of demonstrating reference wavefront accuracy of {approximately}{lambda}{sub EUV}/300.

OSTI ID:
670205
Report Number(s):
CONF-9805132--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 16; ISSN 0734-211X; ISSN JVTBD9
Country of Publication:
United States
Language:
English

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