Characterization of amorphous surface layers in Fe implanted with Ti and C
The amorphous layers produced when Ti alone or Ti and C are implanted into high purity Fe have been characterized by ion beam analyses and TEM. Ion channeling measurements on an Fe single crystal were used to monitor the amorphous layer thickness, while TEM was used to characterize the implanted alloy's microstructure. The C and Ti profiles were directly measured by 6 MeV He backscattering. The C profile analysis took advantage of a highly non-Rutherford (..cap alpha..,..cap alpha..) scattering cross-section at high energy. For implanted concentrations less than or equal to 20 at. % Ti, both Ti and C are required to produce the amorphous phase. Lower limits on the Ti and C concentrations needed for amorphization have been determined; e.g. with 20 at. % Ti, 4 +- 2 at. % C is required. Ion-implanted C was found to be as effective as C which is incorporated into the sample during Ti implantation in forming the amorphous phase. This result shows how C implantation can be used to form a thicker amorphous layer on Ti-implanted steels in order to extend reductions in friction and wear to more severe wear regimes.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6685191
- Report Number(s):
- SAND-84-0464C; CONF-840760-4; ON: DE84014960
- Resource Relation:
- Conference: Ion beam modification of materials conference, Ithaca, NY, USA, 16 Jul 1984; Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Amorphous alloys of ion-implanted Fe-Ti-C
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Related Subjects
IRON
ION IMPLANTATION
AMORPHOUS STATE
CARBON IONS
ION CHANNELING
KEV RANGE
LAYERS
MONOCRYSTALS
TITANIUM IONS
TRANSMISSION ELECTRON MICROSCOPY
CHANNELING
CHARGED PARTICLES
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
IONS
METALS
MICROSCOPY
TRANSITION ELEMENTS
360106* - Metals & Alloys- Radiation Effects