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Preparation of a Langmuir-Blodgett layer of ultrafine platinum particles and its application to n-Si for efficient photoelectrochemical solar cells

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2059281· OSTI ID:6683714
; ; ;  [1];  [2]
  1. Osaka Univ. (Japan)
  2. Univ. of Tokyo (Japan). Dept. of Industrial Chemistry
A Langmuir layer of ultrafine platinum particles (2--6 nm in diam) has been developed on a water surface by dropping a Pt colloid solution, prepared by refluxing an ethanol-water (1:1) solution of hexachloroplatinic(IV) acid in the presence of poly(N-vinyl-2-pyrrolidone) as a stabilizer. The layer is transferred onto a single-crystal n-type silicon (n-Si) wafer by the horizontal lifting method. The Pt particles are rather homogeneously scattered on n-Si, and the particle density can be controlled on a nanometer scale by changing the area of the Langmuir layer at the time of transfer. The open-circuit photovoltage (V[sub oc]) for photoelectrochemical (PEC) solar cells with such n-Si electrodes is inversely related to Pt-particle density, and reaches 0.635 V, much higher than that for n-Si coated with a continuous Pt layer (ca. 0.30 V) or that for the conventional p-n junction Si solid solar cell of a similar simple cell structure (ca. 0.59 V). This result is in harmony with the previously proposed theory, the above increase in V[sub oc] being explained by the decrease in the majority carrier dark saturation current density.
OSTI ID:
6683714
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:11; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English