Semiconductor laser device
Patent
·
OSTI ID:6679318
Disclosed is a semiconductor laser device comprising a semiconductor assembly which serves to effect laser oscillation and in which first, second and third semiconductor layers are successively stacked on a predetermined semiconductor body, at least the first and third semiconductor layers being small in the refractive index relative to the second semiconductor layer and great in the forbidden band gap relative thereto and having conductivity types opposite to each other, and means to spread depletion regions within at least a part of a current path for effecting the laser oscillation and in a manner to intersect with the current path. A small-sized semiconductor laser device capable of fast modulation can be realized.
- Assignee:
- Hitachi, Ltd. (Japan)
- Patent Number(s):
- US 4430741
- OSTI ID:
- 6679318
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DEPLETION LAYER
DESIGN
FIELD EFFECT TRANSISTORS
LASERS
LAYERS
MATERIALS
MODULATION
N-TYPE CONDUCTORS
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS
420300* -- Engineering-- Lasers-- (-1989)
DEPLETION LAYER
DESIGN
FIELD EFFECT TRANSISTORS
LASERS
LAYERS
MATERIALS
MODULATION
N-TYPE CONDUCTORS
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS