Electronic and optical properties of amorphous Si:H films deposited by chemical vapor deposition

Journal Article · Wed Dec 15 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93414· OSTI ID:6656944

Akhtar, M; Dalal, V L; Ramaprasad, K R; Gau, S; Cambridge, J A

Doping properties, optical absorption, and infrared (IR) spectra of amorphous Si:H(a-Si:H) films prepared by chemical vapor deposition (CVD) of Si/sub 2/H/sub 6/ are reported. The optical absorption curves are very sharp and they indicate that the band gap of CVD a-Si:H can be changed substantially by varying the deposition temperature. A band gap of 1.5 eV has been achieved. IR spectra indicate the presence of Si--H and SiH/sub 2/ bonds, but H content is less than in device-quality glow-discharge deposited a-Si:H. The activation energy of undoped films is 0.6 eV. n-type doping can be achieved by PH/sub 3/ doping and the activation energy reduces to 0.12 eV upon doping. Photoinduced changes in electron trapping (Staebler--Wronski effect) are small in CVD a-Si:H films.

• Research Organization: Chronar Corporation, Princeton, New Jersey 08540
• OSTI ID: 6656944
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
ACTIVATION ENERGY
AMORPHOUS STATE
CHEMICAL BONDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ENERGY
ENERGY GAP
EXPERIMENTAL DATA
FERMIONS
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
INFRARED RADIATION
LEPTONS
MATERIALS
N-TYPE CONDUCTORS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SILANES
SILICON COMPOUNDS
SPECTRA
SURFACE COATING
TEMPERATURE DEPENDENCE
TRAPPING