Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

Journal Article · Mon Jan 16 00:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.114202· OSTI ID:6654689

Blum, O; Fritz, I J; Dawson, L R; Howard, A J; Headley, T J; Klem, J F; Drummond, T J ^[1]

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1. Sandia National Laboratories, MS0603, P. O. Box 5800, Albuquerque, New Mexico 87185 (United States)

Surface normal optoelectronic devices operating at long wavelengths ([gt]1.3 [mu]m), require distributed Bragg reflectors (DBRs) with a practical number ([le]50) of mirror layers. This requirement implies a large refractive index difference between the mirror layers, which is difficult to achieve in the traditionally used phosphide compounds. We demonstrate a highly reflective AlAsSb/GaAsSb DBR grown nominally lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.74 [mu]m with maximum reflectivity exceeding 98%, which is well fitted by our theoretical predictions. Atomic force microscopy and transmission electron microscopy indicate reasonable crystal quality with some defects due to an unintentional lattice mismatch to the substrate.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6654689
• Journal Information: Applied Physics Letters; (United States), Vol. 66:3; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
BRAGG REFLECTION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
SUPERLATTICES
INFRARED SPECTRA
MIRRORS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
REFLECTIVITY
SEMICONDUCTOR DEVICES
ALUMINIUM COMPOUNDS
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SPECTRA
SURFACE PROPERTIES
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)