Trapping and surface permeation of deuterium in He-implanted Fe
Iron was ion implanted with He and deuterium (D) and then heated at a constant rate of 2 K/min. The evolving depth distribution of the D was monitored using the nuclear reaction /sup 2/D(/sup 3/He,p)/sup 4/He, and resulting data were analyzed by applying the diffusion equation with appropriate trapping terms. Two defect traps for D were identified, the respective binding enthalpies being 0.53 +- 0.07 and 0.71 +- 0.07 eV when referenced to a solution site. The weaker of these traps is believed to be a monovacancy, while the stronger may be a vacancy cluster. A third type of trap, with strength 0.78 +- 0.08 eV, was found to be associated with He. It is proposed that the responsible entities are approx.1 nm He bubbles which were observed by transmission electron microscopy, and that the D is bound to the walls of these bubbles by a mechanism similar to chemisorption. The analysis also yielded an estimate of the D recombination coefficient at the electropolished and air-exposed Fe surface, approx.5 x 10/sup -19/ cm/sup 4//s at a temperature of 500 K.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6653419
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
BUBBLES
CHARGED PARTICLES
CHARGED-PARTICLE REACTIONS
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DEUTERIUM
DEUTERIUM IONS
DEUTERON REACTIONS
DIFFUSION
DISTRIBUTION
ELECTRON MICROSCOPY
ELEMENTS
ENTHALPY
EQUATIONS
EXPERIMENTAL DATA
HEATING
HELIUM IONS
HYDROGEN ISOTOPES
INFORMATION
ION IMPLANTATION
IONS
IRON
ISOTOPES
LIGHT NUCLEI
METALS
MICROSCOPY
NUCLEAR REACTIONS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PHYSICAL PROPERTIES
POINT DEFECTS
RECOMBINATION
SPATIAL DISTRIBUTION
STABLE ISOTOPES
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING
VACANCIES
WALLS