Low-temperature single-crystal Si TFT`s fabricated on Si films processed via sequential lateral solidification
Journal Article
·
· IEEE Electron Device Letters
- Columbia Univ., New York, NY (United States)
- Lawrence Livermore National Lab., CA (United States)
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.
- Sponsoring Organization:
- Defense Advanced Research Projects Agency, Arlington, VA (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 665300
- Journal Information:
- IEEE Electron Device Letters, Vol. 19, Issue 8; Other Information: PBD: Aug 1998
- Country of Publication:
- United States
- Language:
- English
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