Crystal growth and low coercive field 180{degree} domain switching characteristics of stoichiometric LiTaO{sub 3}

Journal Article · Sun Nov 01 00:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122676· OSTI ID:664657

Kitamura, K; Furukawa, Y ^[1]; Niwa, K ^[2]; Gopalan, V; Mitchell, T E ^[3]

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1. National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba 305-0044 (Japan)
2. NGK Spark Plug Co.Ltd., 2808 Iwasaki, Komaki 485-8510 (Japan)
3. Center for Materials Science, MS K765, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We grew LiTaO{sub 3} single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180{degree} ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 {degree}C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO{sub 3thinsp} crystals with a Curie temperature near 600 {degree}C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 664657
• Journal Information: Applied Physics Letters, Vol. 73, Issue 21; Other Information: PBD: Nov 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LITHIUM COMPOUNDS
LITHIUM OXIDES
TANTALATES
FERROELECTRIC MATERIALS
COERCIVE FORCE
STOICHIOMETRY
MONOCRYSTALS
CZOCHRALSKI METHOD
POINT DEFECTS
DOMAIN STRUCTURE
SWITCHES