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Title: Continuous liquid feed Czochralski growth. LSSA Large Area Silicon Sheet Task. Quarterly report No. 3, April--June 1978

Technical Report ·
DOI:https://doi.org/10.2172/6642767· OSTI ID:6642767

Siltec Corporation's contract with JPL is directed towards the design and development of equipment and processes, to demonstrate continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells. Continuous growth is defined as the growth of 100 Kg of single silicon crystal, 10 cm in diameter, from one container. Siltec's approach to meeting this goal is to develop a furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system and a liquid transfer mechanism, with associated automatic feedback controls. The design of the furnace elements has been completed, and all parts are now in the fabrication stage. The electronic control console regulating the growth system and meltdown system, and the liquid transfer mechanism, has been assembled. An experiment was performed with a standard production furnace, to demonstrate controlled flow of molten silicon through a small I.D. tube by pressure differential. Sections of the transfer tube system were evaluated, power requirements to balance heat losses determined, axial temperature profile in the tube, and radial temperature gradients in the heat pack were measured. A mathematical model was made for the electromagnetic throttle valve to control flow of molten silicon through small I.D. tubes. Design parameters were derived from the model to build a working system for performance evaluation.

Research Organization:
Siltec Corp., Menlo Park, CA (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
NAS-7-100-954886
OSTI ID:
6642767
Report Number(s):
DOE/JPL/954886-3
Country of Publication:
United States
Language:
English