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Spin polarons in high- Tc copper oxides: Differences between electron- and hole-doped systems

Journal Article · · Physical Review, B: Condensed Matter; (USA)
;  [1]
  1. The Department of Physics, The University of Chicago, Chicago, IL (USA) The James Franck Institute, The University of Chicago, Chicago, IL (USA)
It is argued that in the small-doping region there is an asymmetry between the hole-doped and the electron-doped copper oxide systems. This asymmetry is reflected in both the magnetic and transport properties. Significant oxygen {ital p}-{ital p} orbital overlap leads to a large conduction-band width, which has qualitatively different effects on the two differently doped systems. In the hole-doped case, large-spin polarons are formed as the system is doped; this leads to a quick destruction of the antiferromagnetic correlation. In the electron-doped case, doped carriers are more localized; thus the magnetic correlation is more robust with respect to doping. In the low doping concentration, the low-temperature conductivity is shown to be two-dimensional variable-range-hopping type. The conductivity, which is expected to scale with the asymmetry of the magnetic phase diagram, is smaller in an electron-doped system than that of a hole-doped system.
OSTI ID:
6638436
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:1; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English