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Title: Doping and pressure studies on YbBiPt

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.353700· OSTI ID:6633474
; ; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Lawrence Berkeley Laboratory, and Department of Chemistry, University of California, Berkeley, California 94720 (United States)
  3. Eidgenossische Technische Hochschule Zurich, Zurich (Switzerland)

The compound YbBiPt exhibits an extremely large low-temperature [ital C]/[ital T] ([gamma][similar to]8 J K[sup [minus]2] mol[sup [minus]1]/Yb) which, if due solely to a renormalized effective mass, would make this material the heaviest correlated electron system known to date. In the Kondo model, the very large [gamma] corresponds to a small characteristic energy scale that is expected to be pressure dependent. We have studied the effect of chemical pressure on YbBiPt single crystals by heat-capacity measurements on Y and Lu-doped samples. We have also made preliminary low-temperature measurements under hydrostatic pressure of the heat capacity (300 mK[le][ital T][le]2 K, up to 8 kbar) and resistance (30 mK[le][ital T][le]1 K, at 16 kbar).

DOE Contract Number:
AC03-76SF00098
OSTI ID:
6633474
Journal Information:
Journal of Applied Physics; (United States), Vol. 73:10; ISSN 0021-8979
Country of Publication:
United States
Language:
English