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Title: Task B: Research on stable, high-efficiency, large-area, amorphous-silicon-based submodules: Semiannual subcontract report, 1 February 1987--31 July 1987

Technical Report ·
OSTI ID:6628879

This semiannual report presents results of research on stable, high-efficiency, large-area, amorphous-silicon-based submodules. High conversion efficiencies (up to 11.95%) were obtained in small-area, single-junction, a-Si solar cells by using textured tin oxide, superlattice p-layers, graded carbon concentrations near the p-i interface, and highly relective ITO/silver back contacts. Researchers also fabricated single-junction a-SiC and a-SiGe p-i-n cells with efficiencies of 9%--11%. Stacked-junction cells of a-SiC/a-Si, a-SiC/a-SiGe, and a-SiC/a-Si/a-SiGe were fabricated, and efficiencies of about 10% were achieved in some of them. Boron-doped microcrystalline SiC films were developed that contain up to 6 at.% C with conductivities of 3 /times/ 10/sup /minus/3/ ohm /sup /minus/1/ cm/sup /minus/1/ at room temperature and activation energies of 0.11 eV. Stability studies showed that light-induced degradation is usually enhanced by the presence of C grading near the p-i interface. Light-induced degradation of the fill factor of p-i-n cells strongly correlates with optical absorption at 1.2 eV, as measured by photothermal deflection spectroscopy. 11 refs., 70 figs., 16 tabs.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Solarex Corp., Newtown, PA (USA). Thin Film Div.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6628879
Report Number(s):
SERI/STR-211-3375; ON: DE89000843
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English