Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium-gallium-arsenide-phosphide double heterostructure lasers

Journal Article · Tue Feb 01 00:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332107· OSTI ID:6627278

Besomi, P; Wilson, R B; Wagner, W R; Nelson, R J

Thermal degradation of indium phosphide (InP) single crystal substrates prior to liquid phase epitaxy growth has been virtually eliminated by using an improved protection technique. The phosphorus partial pressure provided by a Sn-In-P solution localized inside an external chamber surrounding the InP substrate prior to growth prevents thermal damage to the surface. Nomarski contrast photomicrographs, as well as photoluminescence and x-ray diffractometric measurements indicate that InP substrates protected by this method suffer a negligible deterioration, in contrast to the results of the more commonly used cover-wafer method.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6627278
• Journal Information: J. Appl. Phys.; (United States), Vol. 54:2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
CRYSTAL GROWTH
SUBSTRATES
THERMAL DEGRADATION
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LIQUIDS
MONOCRYSTALS
PARTIAL PRESSURE
PHOTOLUMINESCENCE
PHOTOMICROGRAPHY
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTALS
DATA
DIFFRACTION
FLUIDS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
LUMINESCENCE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOGRAPHY
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)