Mode locking of /GaAl/As injection lasers

Conference · Thu Jan 01 04:00:00 EST 1981 · Proc. Soc. Photo-Opt. Instrum. Eng.; (United States)

OSTI ID:6627039

Figueroa, L ^[1]; Lau, K ^[2]

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1. Hughes Research Laboratories, Malibu, CA
2. California Institute of Technology, Pasadena, CA

The important experimental parameters affecting the mode locking of a variety of (GaAl)As injection lasers operating in an external optical cavity are described. It is found that short detector-limited pulses (less than 60 psec) with 100% modulation depth can only be obtained using lasers that exhibit either an anomalous narrow-band noise resonance or self-pulsations. Little or no mode locking is observed in lasers having the normal broad noise resonance. The maximum frequency of the mode-locked pulses is approximately 1 GHz and is limited by the laser and not the external cavity. The observed amplitude, pulse width, and frequency of the mode-locked pulses are correlated to the degree of self-pulsation and the external cavity length. The experimental results are in qualitative agreement with a model that uses the rate equations modified by either electron traps or saturable absorbers and a delayed feedback term. The results appear to imply that mode locking in (GaAl)As injection lasers is related to saturable absorbing centers and is very similar to passive mode locking in dye lasers.

• OSTI ID: 6627039
• Report Number(s): CONF-810204-
• Conference Information: Journal Name: Proc. Soc. Photo-Opt. Instrum. Eng.; (United States) Journal Volume: 269
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
MODE LOCKING
MODULATION
NOISE
PNICTIDES
PULSE TECHNIQUES
PUMPING
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS