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U.S. Department of Energy
Office of Scientific and Technical Information

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, January 1-March 31, 1979

Technical Report ·
OSTI ID:6626003
A theory capable of predicting the performance of polycrystalline silicon solar cells is formulated. It relates grain size to mobility, lifetime, diffusion length, reverse saturation current, open circuit photovoltage and fill factor. Only the diffusion lengths measured by the surface photovoltage technique for grains less than or equal to 5 ..mu..m do not agree with the theory. The reason for this discrepancy is presently being investigated. It is concluded that grains greater than or equal to 100 ..mu..m are necessary to achieve efficiencies greater than or equal to 10 percent at AMl irradiance. The calculations were performed for the case of no grain boundary passivation. The improvements to be expected from grain boundary passivation are under investigation. The following types of solar cells are considered in the model: SnO/sub 2//Si Heterostructure, MIS, and p/n junction. In all types of solar cells considered, grain boundary recombination plays a dominant role, especially for small grains. Though the calculations were originally expected to yield only order of magnitude results, they have proven to be accurate for most parameters within 10 percent. It is almost impossible to cover every aspect of solar cell performance in one theory. But it is felt that the present theory is the most extensive theory ever postulated for polycrystalline silicon solar cells. (WHK)
Research Organization:
Exxon Research and Engineering Co., Linden, NJ (USA)
DOE Contract Number:
AC03-79ET23047
OSTI ID:
6626003
Report Number(s):
DOE/ET/23047-1
Country of Publication:
United States
Language:
English