Ultrafast coherent dynamics of fano resonances in semiconductors

Journal Article · Sun Jan 15 23:00:00 EST 1995 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.74.470· OSTI ID:6620090

Siegner, U; Mycek, M; Glutsch, S; Chemla, D S ^[1]

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1. Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We present the first investigation of the ultrafast dynamics of the coherent emission from Fano resonances in semiconductors. Time-resolved femtosecond four-wave mixing (FWM) in GaAs under high magnetic field shows that dephasing is dominated by the coupling between discrete states and continua responsible for the Fano interference. In striking contrast to atomic systems and Lorentzian excitations in semiconductors, the decay of the time-integrated FWM signal is not related to dephasing. This decay is due to quantum interference originating from the interplay between semiconductor many-body effects and Fano interference.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6620090
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 74:3; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
COHERENT RADIATION
DYNAMICS
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
FANO FACTOR
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFERENCE
MECHANICS
PHOTO-INDUCED TRANSIENT SPECTROSCOPY
PNICTIDES
RADIATIONS
RESONANCE
SPECTRA
SPECTROSCOPY