Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:Zn
The paramagnetic state of the phosphorus-on-indium antisite (P/sub In/) has been observed by optically detected magnetic resonance (ODMR) in as-grown zinc-doped indium phosphide (zinc concentration approx. =10/sup 16/ cm/sup -3/). The antisite resonance is seen both as enhancing the antisite-to-acceptor photoluminescence (PL) at 0.8 eV and as quenching the shallow-donor to acceptor PL at 1.37 eV. The g value (g = 2.006) and hyperfine constant(A = 0.100 cm/sup -1/) are in good agreement with previous results on electron-irradiated p-type InP. The dependence of the ODMR on microwave power, microwave modulation frequency, and photoexcitation intensity is examined, and a rate-equation model is developed for the important recombination processes. The experimental results suggest that the antisite-to-acceptor recombination rate is approximately 4 x 10/sup 4/ s/sup -1/; the antisite electron spins are unthermalized, but recombine with spin-thermalized holes; and the antisite concentration may be greater than 2 x 10/sup 15/ cm/sup -3/. Two other resonances are also observed, a shallow donor resonance (g = 1.217) and an unidentified broad resonance (g = 2.0).
- Research Organization:
- Department of Physics, University of Utah, Salt Lake City, Utah 84112
- OSTI ID:
- 6618166
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:18; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MAGNETIC RESONANCE
MAGNETISM
MATERIALS
MICROWAVE RADIATION
PARAMAGNETISM
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
RADIATIONS
RESONANCE
SEMICONDUCTOR MATERIALS
ULTRALOW TEMPERATURE
ZINC ADDITIONS
ZINC ALLOYS