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Optically detected magnetic resonance study of antisite-to-acceptor and related recombination processes in as-grown InP:Zn

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

The paramagnetic state of the phosphorus-on-indium antisite (P/sub In/) has been observed by optically detected magnetic resonance (ODMR) in as-grown zinc-doped indium phosphide (zinc concentration approx. =10/sup 16/ cm/sup -3/). The antisite resonance is seen both as enhancing the antisite-to-acceptor photoluminescence (PL) at 0.8 eV and as quenching the shallow-donor to acceptor PL at 1.37 eV. The g value (g = 2.006) and hyperfine constant(A = 0.100 cm/sup -1/) are in good agreement with previous results on electron-irradiated p-type InP. The dependence of the ODMR on microwave power, microwave modulation frequency, and photoexcitation intensity is examined, and a rate-equation model is developed for the important recombination processes. The experimental results suggest that the antisite-to-acceptor recombination rate is approximately 4 x 10/sup 4/ s/sup -1/; the antisite electron spins are unthermalized, but recombine with spin-thermalized holes; and the antisite concentration may be greater than 2 x 10/sup 15/ cm/sup -3/. Two other resonances are also observed, a shallow donor resonance (g = 1.217) and an unidentified broad resonance (g = 2.0).

Research Organization:
Department of Physics, University of Utah, Salt Lake City, Utah 84112
OSTI ID:
6618166
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:18; ISSN PRBMD
Country of Publication:
United States
Language:
English