Ultrafast scanning tunneling microscopy (STM) using a photoexcited low-temperature-grown gallium arsenide tip
In the quest for atomic spatial and picosecond temporal resolutions, several groups have integrated an STM tip with an ultrafast optoelectronic switch that gates the tunneling current from the tip. The authors report a novel ultrafast STM tip consisting of a cleaved GaAs substrate with a 1-{micro}m thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. since LT-GaAs has a carrier lifetime of 1 ps, the photo-excitatin of the tip with an ultrafast above-bandgap pulse provides carriers for the tunneling current and photoconductively gates the current from the tip with picoseconds time resolution. The authors use this tip to detect picosecond voltage transients on a coplanar stripline.
- Research Organization:
- Los Alamos National Lab., Materials Science and Technology Div., NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Management and Administration, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 661701
- Report Number(s):
- LA-UR-98-610; CONF-980740-; ON: DE98003701; TRN: AHC29814%%179
- Resource Relation:
- Conference: Ultrafast phenomena `98, Muenchen (Germany), 12-17 Jul 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultrafast, dynamical imaging of surfaces by use of a scanning tunneling microscope with a photoexcited, low-temperature-grown GaAs tip
Ultrafast Scanning Tunneling Microscopy Using a Photoexcited Low-Temperature-Grown GaAs Tip