First demonstration of room temperature intersubband-interband double-resonance spectroscopy of GaAs/AlGaAs quantum wells

Journal Article · Fri Jun 01 00:00:00 EDT 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.56598· OSTI ID:6608576

Yang, D D; Julien, F H; Lourtioz, J M; Boucaud, P ^[1]; Planel, R ^[2]

---

1. Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay (FR)
2. Groupment Scientifique CNET-CNRS, 92220 Bagneux (FR)

The authors report on the first intersubband-interband double-resonance experiments in undoped GaAs/Al{sub 0.33}Ga{sub 0.67}As multiple quantum well structures at room temperature. The well width is 78 {angstrom}. A Ti:Sapphire laser is used to pump the interband transitions while the first intersubband transition is probed with a CO{sub 2} laser. The intersubband absorption is found to peak at 10.6 {mu}m and a 10 meV linewidth is measured. The absorption signal is also recorded at a fixed CO{sub 2} tuning while varying the pump laser wavelength from 700 to 850 nm. A high resolution spectrum is obtained which reflects the step-like density of states with sharp peaks at the exciton resonances.

• OSTI ID: 6608576
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:6; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
74 ATOMIC AND MOLECULAR PHYSICS
HETEROJUNCTIONS
SPECTROSCOPY
LASER MATERIALS
EXCITED STATES
SEMICONDUCTOR LASERS
QUANTUM EFFICIENCY
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
CARBON DIOXIDE LASERS
DOUBLE RESONANCE METHODS
GALLIUM ARSENIDES
PROBES
SAPPHIRE
TITANIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CORUNDUM
EFFICIENCY
ELEMENTS
ENERGY LEVELS
GALLIUM COMPOUNDS
GAS LASERS
JUNCTIONS
LASERS
MATERIALS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SPECTRA
TRANSITION ELEMENTS
426002* - Engineering- Lasers & Masers- (1990-)
400101 - Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
640302 - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory