First demonstration of room temperature intersubband-interband double-resonance spectroscopy of GaAs/AlGaAs quantum wells

Journal Article · Fri Jun 01 04:00:00 EDT 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.56598· OSTI ID:6608576

Yang, D D; Julien, F H; Lourtioz, J M; Boucaud, P ^[1]; Planel, R ^[2]

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1. Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay (FR)
2. Groupment Scientifique CNET-CNRS, 92220 Bagneux (FR)

The authors report on the first intersubband-interband double-resonance experiments in undoped GaAs/Al{sub 0.33}Ga{sub 0.67}As multiple quantum well structures at room temperature. The well width is 78 {angstrom}. A Ti:Sapphire laser is used to pump the interband transitions while the first intersubband transition is probed with a CO{sub 2} laser. The intersubband absorption is found to peak at 10.6 {mu}m and a 10 meV linewidth is measured. The absorption signal is also recorded at a fixed CO{sub 2} tuning while varying the pump laser wavelength from 700 to 850 nm. A high resolution spectrum is obtained which reflects the step-like density of states with sharp peaks at the exciton resonances.

• OSTI ID: 6608576
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:6; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

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