Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Superconductivity and Moessbauer effect of Nb/sub 3/Sn produced by Sn implantation

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00117062· OSTI ID:6605553

We have implanted Sn, Ge, and Si into Nb films. The resulting Nb-Sn compounds and their annealing behavior have been analyzed by the Moessbauer effect and compared to samples obtained by diffusion of Sn into Nb foils. Moessbauer spectra show that Nb/sub 3/Sn is obtained just by implantation, but with a T/sub c/ of only 5 K. The 925/sup 0/C annealing temperature necessary to form the A15 structure with long-range order of Nb chains and T/sub c/ values up to 17.8 K is at least 100/sup 0/C higher in implanted samples than in samples than in samples prepared by diffusion of Sn into Nb. This is explained in terms of implantation-induced lattice defects. The metastable A15 phases of Nb/sub 3/Ge and Nb/sub 3/Si could not be formed by Ge or Si implantation, regardless of target or annealing temperature. It is suggested that the high-energy ions only form phases stable at high temperatures and with low T/sub c/ values.

Research Organization:
Institut fuer Festkoerperforschung, Kernforschungsanlage Juelich, Juelich, West Germany
OSTI ID:
6605553
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 33:1; ISSN JLTPA
Country of Publication:
United States
Language:
English