A study of Pd-Ta on Si(100) using AES, RBS and variable energy positron annihilation
Conference
·
OSTI ID:6602703
The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high that Pd2Si grains formed in a Si matrix. The defect density of the Ta layer, which remained after outdiffusion of Pd, was investigated using variable energy positron annihilation. The defect concentration is very high, as deduced from the trapped positron fraction. A model is presented that describes the composition dependence of the reaction temperature. 26 refs., 6 figs., 1 tab.
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 6602703
- Report Number(s):
- BNL-42053; CONF-881002-42; ON: DE89005646
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALLIZATION
DIFFRACTION
DIFFUSION BARRIERS
ELASTIC SCATTERING
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
MICROELECTRONICS
PALLADIUM ALLOYS
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
PHASE TRANSFORMATIONS
PLATINUM METAL ALLOYS
REFRACTORY METAL COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SUBSTRATES
TANTALUM ALLOYS
TANTALUM COMPOUNDS
TANTALUM SILICIDES
TEMPERATURE DEPENDENCE
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALLIZATION
DIFFRACTION
DIFFUSION BARRIERS
ELASTIC SCATTERING
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
MICROELECTRONICS
PALLADIUM ALLOYS
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
PHASE TRANSFORMATIONS
PLATINUM METAL ALLOYS
REFRACTORY METAL COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SUBSTRATES
TANTALUM ALLOYS
TANTALUM COMPOUNDS
TANTALUM SILICIDES
TEMPERATURE DEPENDENCE
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION