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Title: Method for forming indium oxide/n-silicon heterojunction solar cells

Patent ·
OSTI ID:6600837

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Assignee:
Exxon Research and Engineering Co.
Patent Number(s):
US 4436765
OSTI ID:
6600837
Resource Relation:
Patent File Date: Filed date 24 Sep 1982; Other Information: PAT-APPL-422668
Country of Publication:
United States
Language:
English