Semiconductor laser with /sup 133/Cs vapor external selective mirror

Journal Article · Sat Jul 01 04:00:00 EDT 1978 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1978v008n07ABEH010427· OSTI ID:6599046

Velichanskii, V L; Zibrov, A S; Nikitin, V V; Sautenkov, V A; Malyshev, V K; Kharisov, G G

Pulsed stimulated emission near the D/sub 2/ line of /sup 133/Cs (852.1 nm) was obtained from a semiconductor laser with an external selective element utilizing specular reflection from a cesium vapor cell. The power and spectral width of the stimulated emission at a vapor pressure of 2 Torr were 1 mW and 5 x 10/sup -3/ nm, respectively. Investigations were made of the spectral and temporal characteristics of the laser radiation at different cesium vapor pressures. An analysis was made of the conditions needed to enhance substantially the average stimulated emission power. The possibility of using a laser with an external selectively reflecting cell for optical pumping of alkali metal vapors is discussed. The resonance absorption lines of rubidium and potassium were recorded using a pulsed injection laser.

• Research Organization: P. N. Lebedev Physics Institute, USSR Academy of Sciences, Moscow
• OSTI ID: 6599046
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 8:7; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALI METAL ISOTOPES
CESIUM 133
CESIUM ISOTOPES
EMISSION
ENERGY-LEVEL TRANSITIONS
FREQUENCY SELECTION
ISOTOPES
LASER MIRRORS
LASERS
NUCLEI
ODD-EVEN NUCLEI
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
STABLE ISOTOPES
STIMULATED EMISSION
TIME DEPENDENCE