Trapping and surface recombination of ion-implanted deuterium in stainless steel

Journal Article · Sat Sep 15 04:00:00 EDT 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334165· OSTI ID:6597816

Myers, S M; Wampler, W R; Besenbacher, F

Nuclear-reaction analysis was used to investigate the behavior of deuterium (D) in three austenitic stainless steels following ion implantation with D and He. The D was bound to irradiation defects with a binding enthalpy of 0.23 +- 0.08 eV relative to solution sites. Helium bubbles of diameter approx.1 nm trapped D with a binding enthalpy of 0.42 +- 0.08 eV, presumably through a chemisorptionlike process at the bubble walls. Surface-controlled release of D to the gas phase was characterized over the temperature range 425--575 K, and the rate was found to be proportional to the square of the solution concentration within the matrix. Electropolish oxide reduced the surface release rate by as much as 1000 times from that of an ion-sputtered surface.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6597816
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ADSORPTION
ALLOYS
AUSTENITIC STEELS
BUBBLES
CHEMICAL ANALYSIS
CHROMIUM ALLOYS
CORROSION RESISTANT ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DESORPTION
DEUTERIUM
DISPERSIONS
ELECTROLYSIS
ELECTROPOLISHING
ELEMENTS
ENTHALPY
FLUIDS
GASES
HELIUM
HIGH TEMPERATURE
HYDROGEN ISOTOPES
ION IMPLANTATION
IRON ALLOYS
IRON BASE ALLOYS
ISOTOPES
LIGHT NUCLEI
LYSIS
MIXTURES
NONMETALS
NUCLEAR REACTION ANALYSIS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL PROPERTIES
POLISHING
RARE GASES
RECOMBINATION
SOLID SOLUTIONS
SOLUTIONS
SORPTION
SORPTIVE PROPERTIES
STABLE ISOTOPES
STAINLESS STEELS
STEELS
SURFACE FINISHING
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRAPPING