Development of tunable semiconductor lasers for application to air pollution measurements. Final report
Technical Report
·
OSTI ID:6595599
This document discusses background and experimental considerations for optically pumped semiconductor lasers; transverse optical pumping of semiconductor lasers; efficient resonant logitudinal optical pumping of InSb lasers; high resolution spectroscopy with optically pumped semiconductor lasers; and atmospheric spectroscopy and long-path monitoring techniques with optically pumped semiconductor lasers. Tunable, optically pumped semiconductor lasers for high-resolution infrared spectroscopy applicable to air pollution monitoring were developed. The authors achieved tunable cw laser emission at 5.3 micrometer from InSb and 3.0 micrometer from InAs as well as pulsed emission at 1.5 micrometer from GaSb, 3.8 micrometer from Te, and 4.3 micrometer from PbS, all optically pumped at liquid helium temperatures. The cw InSb and InAs lasers were used to obtain Doppler-limited absorption spectra of NO, C/sub 2/H/sub 4/, H/sub 2/O (5.3 micrometer), and NH/sub 3/ (3.0 micrometer). Temperature, magnetic field cavity and tuning techniques were demonstrated for these lasers, and the effect of pumping geometry and pump wavelength on the conversion efficiency and spectral quality was investigated. The semiconductor lasers act as tunable frequency converters for a number of fixed-frequency or broad-band pump sources such as Nd:YAG, CO, and GaAs diode lasers. The GaAs diode pump provides an efficient compact and inexpensive source easily adaptable to field monitoring operation.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
- OSTI ID:
- 6595599
- Report Number(s):
- PB-279832; NSF/RANN/IT/GI-34990/PR/75-4
- Country of Publication:
- United States
- Language:
- English
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