Optimizing the {ital Q} value in three-dimensional metallic photonic band gap crystals

Journal Article · Thu Oct 01 00:00:00 EDT 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.368623· OSTI ID:659297

Leung, W Y; Tuttle, G; Sigalas, M M; Biswas, R; Ho, K M; Soukoulis, C M ^[1]

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1. Microelectronics Research Center and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011 (United States)

A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8{endash}26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor ({ital Q}) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q{ge}300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 659297
• Journal Information: Journal of Applied Physics, Vol. 84, Issue 8; Other Information: PBD: Oct 1998
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CRYSTALS
ENERGY GAP
QUALITY FACTOR
WAVE PROPAGATION
MICROWAVE RADIATION
DEFECTS
LATTICE PARAMETERS
RODS
LAYERS