Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High-temperature oxidation of chemically vapor-deposited silicon nitride in a carbon monoxide-carbon dioxide atmosphere

Journal Article · · Journal of the American Ceramic Society; (United States)
Oxidation behavior of chemically vapor-deposited silicon nitride (CVD-Si[sub 3]N[sub 4]) in CO-CO[sub 2] atmospheres between 1,823 and 1,923 K was investigated using a thermogravimetric technique. Mass loss of Si[sub 3]N[sub 4] (active oxidation) was observed in a region of P[sub CO[sub 2]]/P[sub CO] < 1, while mass gain (passive oxidation) was observed at around P[sub CO[sub 2]]/P[sub CO] = 10. In the active oxidation region below P[sub CO[sub 2]]/P[sub CO] = 10[sup [minus]4], carbon particles were formed on the Si[sub 3]N[sub 4] surface as an oxidation product, and the mass-loss rates were independent of P[sub CO[sub 2]]/P[sub CO]. In the active oxidation region above P[sub CO[sub 2]]/P[sub CO] = 10[sup [minus]4], the mass-loss rates decreased with increasing P[sub CO[sub 2]]/P[sub CO]. The critical P[sub CO[sub 2]]/P[sub CO] value from the active to passive oxidation was 2 orders of magnitude larger than the calculated value predicted from the Wagner model.
OSTI ID:
6587742
Journal Information:
Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 77:11; ISSN 0002-7820; ISSN JACTAW
Country of Publication:
United States
Language:
English