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Observation of quasidirect transitions in In[sub 1[minus][ital x]]Ga[sub [ital x]]P/graded GaP (0. 58[le][ital x][le]0. 75) alloys near the [Gamma]-[ital X][sub 1] crossover

Journal Article · · Physical Review, B: Condensed Matter; (United States)
 [1];  [2]; ;  [3];  [4];  [5];  [6];  [7]
  1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States) Department 1112, MS 0350, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States)
  3. Department of Physics, Emory University, Atlanta, Georgia 30322 (United States)
  4. Department 1322, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  5. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  6. Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
  7. Department of Material Science, University of Cincinnati, Ci
+ Show Author Affiliations
We used room-temperature ellipsometry to study the quasidirect (no-phonon) transitions of [ital disordered] In[sub 1[minus][ital x]]Ga[sub [ital x]]P/graded GaP near crossover compositions (0.64[le][ital x][le]0.75) for the [Gamma][sub 1[ital c]] and [ital X][sub 1[ital c]] conduction-band minima. Careful study of sample microstructures by transmission electron microscopy revealed no ordering. We identify the observed transitions at ([Gamma][sub 15[ital v]-][ital X][sub 1[ital c]]), ([Gamma][sub 15[ital v]-][ital L][sub 1[ital c]]), and ([Gamma][sub 15[ital v]-][ital X][sub 3[ital c]]). The enhanced amplitude of the quasidirect transitions is attributed to band mixing between [Gamma] and [ital L] or [ital X] points in [ital k] space. This observation is corroborated by low-temperature photoluminescence and time-decay experiments. A two-level anticrossing behavior of the [Gamma][sub 1[ital c]] and [ital X][sub 1[ital c]] gaps is observed in photoluminescence with [Gamma]-[ital X] mixing energy [vert bar][ital V][sub [Gamma]-[ital X]][vert bar][approx]12 meV induced by random-alloy disorder.
DOE Contract Number:
AC04-94AL85000; FG02-91ER45439
OSTI ID:
6585109
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 51:7; ISSN 0163-1829; ISSN PRBMDO
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOY SYSTEMS
AMBIENT TEMPERATURE
ELLIPSOMETRY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MEASURING METHODS
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
TERNARY ALLOY SYSTEMS