Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
- Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (United States)
We report the results of a comparison study of photoluminescence (PL) from an In{sub 0.15}Ga{sub 0.85}N/GaN multiple-quantum-well (MQW) sample and an In{sub 0.11}Ga{sub 0.89}N thick epitaxial-layer sample, which have very similar band-gap energies. Large hydrostatic pressures were used for our investigations. The PL emissions in both samples were found to shift linearly to higher energy with applied pressure. In the MQW sample, the pressure response of the InGaN is dominated by the GaN layers, which leads to a significantly weaker pressure dependence as compared to the epilayer sample. Our results yield a pressure coefficient of 2.8{times}10{sup {minus}3}thinspeV/kbar for the In{sub 0.15}Ga{sub 0.85}N/GaN MQW sample and 4.0{times}10{sup {minus}3}thinspeV/kbar for the In{sub 0.11}Ga{sub 0.89}N epilayer. An abrupt decrease of PL intensity in both samples was observed at pressures above 100 kbar, indicating the carriers involved in the radiative recombination processes in the samples originate primarily from the adjacent GaN layers. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 658467
- Journal Information:
- Applied Physics Letters, Vol. 73, Issue 12; Other Information: PBD: Sep 1998
- Country of Publication:
- United States
- Language:
- English
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